| PART |
Description |
Maker |
| CM400DU-5F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD400 Amperes/250 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| CM300DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM75TJ-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HIP6602BCRZ-T HIP6602BCRZA-T HIP6602BCRZA HIP6602B |
FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
Dual Channel Synchronous Rectified Buck MOSFET Driver 双通道同步整流降压MOSFET驱动
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
